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  • ON Semiconductor NSVMMUN2232LT1G TRANS PREBIAS NPN 246MW SOT23-3
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  • ON Semiconductor NSVMMUN2232LT1G TRANS PREBIAS NPN 246MW SOT23-3

    ON Semiconductor NSVMMUN2232LT1G TRANS PREBIAS NPN 246MW SOT23-3

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Description

ON Semiconductor NSVMMUN2232LT1G TRANS PREBIAS NPN 246MW SOT23-3


ON Semiconductor NSVMMUN2232LT1G TRANS PREBIAS NPN 246MW SOT23-3
NEW & Original 
Warranty 180days




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Manufacturer

ON Semiconductor

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

NSVMMUN2232LT1G

NSVMMUN2232LT1G
Description TRANS PREBIAS NPN 246MW SOT23-3
TRANS PREBIAS NPN 246MW SOT23-3
Manufacturer Standard Lead Time 36 Weeks
Detailed Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA  246mW Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets MUN(2,5)232, MMUN2232L, DTC143Exx, NSBC143EF3
PCN Design/Specification Pd-Coated Cu Wire Update 23/Sep/2015
SOT23 27/Sep/2016
Online Catalog NPN Pre-biased Transistors 
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ON Semiconductor
Series -
Packaging ? Tape & Reel (TR) ?
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Part Number MMUN22**L

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