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  • Infineon Technologies  IRFB5615PBF MOSFET N-CH 150V 35A TO-220AB
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  • Infineon Technologies IRFB5615PBF MOSFET N-CH 150V 35A TO-220AB

    Infineon Technologies  IRFB5615PBF MOSFET N-CH 150V 35A TO-220AB

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Description

Infineon Technologies  IRFB5615PBF MOSFET N-CH 150V 35A TO-220AB


Infineon Technologies IRFB5615PBF MOSFET N-CH 150V 35A TO-220AB
NEW & Original 
Warranty 180days

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Ms. Yuki Quan
Hi-tech (HK) Electronics Co.,Ltd
Tel:+86-0755-82497980
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Manufacturer

Infineon Technologies

Manufacturer Part Number

IRFB5615PBF

Description MOSFET N-CH 150V 35A TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 26 Weeks
Detailed Description

N-Channel 150V 35A (Tc) 144W (Tc) Through Hole TO-220AB

Primary Datasheet IRFB5615PbF DatasheetIRFB5615PbF

Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 50V
FET Feature -
Power Dissipation (Max) 144W (Tc)
Rds On (Max) @ Id, Vgs 39 mOhm @ 21A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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