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  • Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK
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  • Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK

    Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK

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Description

Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix IRL640STRLPBF MOSFET N-CH 200V 17A D2PAK
NEW & Original 
Warranty 180days




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Manufacturer

Vishay Siliconix

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

IRL640STRLPBF

Description MOSFET N-CH 200V 17A D2PAK
Lead Time 2days
Detailed Description

N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK


Documents & Media
Datasheets IRL640S,SiHL640S
Video File MOSFET Technologies for Power Conversion
PCN Assembly/Origin Additional Assembly Site 21/Oct/2016
Online Catalog N-Channel MOSFET (Metal Oxide) 
Product Attributes Find Similar Products | Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
Packaging ? Tape & Reel (TR) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 180 mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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