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  • ON Semiconductor FDN360P MOSFET P-CH 30V 2A SSOT3
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  • ON Semiconductor FDN360P MOSFET P-CH 30V 2A SSOT3

    ON Semiconductor FDN360P MOSFET P-CH 30V 2A SSOT3

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Description

ON Semiconductor FDN360P MOSFET P-CH 30V 2A SSOT3


ON Semiconductor FDN360P MOSFET P-CH 30V 2A SSOT3
NEW & Original 
Warranty 180days




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Ms. Yuki Quan
Hi-tech (HK) Electronics Co.,Ltd
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Manufacturer

ON Semiconductor

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

FDN360P

FDN360P
Description MOSFET P-CH 30V 2A SSOT3
MOSFET P-CH 30V 2A SSOT3
Manufacturer Standard Lead Time 42 Weeks
Detailed Description

P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3

P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Documents & Media
Datasheets FDN360P
Molded Pkg, SUPERSOT, 3 Lead Drawing
PCN Design/Specification Wire Bonding 07/Nov/2008
Mold Compound 08/April/2008
Logo 17/Aug/2017
PCN Packaging Binary Year Code Marking 15/Jan/2014
Mult Devices 24/Oct/2017
PCN Part Number Orderable Part Number Update 23/Nov/2016
Online Catalog P-Channel MOSFET (Metal Oxide) 
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging ? Tape & Reel (TR) ?
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 298pF @ 15V
FET Feature -
Power Dissipation (Max) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT-3
Package / Case TO-236-3, SC-59, SOT-23-3
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