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  • ON Semiconductor MMUN2111LT1G TRANS PREBIAS PNP 246MW SOT23-3
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  • ON Semiconductor MMUN2111LT1G TRANS PREBIAS PNP 246MW SOT23-3

    ON Semiconductor MMUN2111LT1G TRANS PREBIAS PNP 246MW SOT23-3

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Description

ON Semiconductor MMUN2111LT1G TRANS PREBIAS PNP 246MW SOT23-3


ON Semiconductor MMUN2111LT1G TRANS PREBIAS PNP 246MW SOT23-3
NEW & Original 
Warranty 180days




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Manufacturer

ON Semiconductor

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

MMUN2111LT1G

MMUN2111LT1G
Description TRANS PREBIAS PNP 246MW SOT23-3
TRANS PREBIAS PNP 246MW SOT23-3
Manufacturer Standard Lead Time 36 Weeks
Detailed Description

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA  246mW Surface Mount SOT-23-3 (TO-236)
Documents & Media
Datasheets MUNx111, MMUN2111L, DTA114Exx, NSBA114EF3
PCN Design/Specification Gold to Copper Wire 14/Oct/2008
Glue Mount Process 11/July/2008
Copper Wire Update 10/Sep/2015
SOT23 16/Sep/2016
PCN Assembly/Origin Wafer Source Addition 26/Nov/2014
Online Catalog PNP Pre-biased Transistors 
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer ON Semiconductor
Series -
Packaging ? Tape & Reel (TR) ?
Part Status Active
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Part Number MMUN21**L

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