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  • ON Semiconductor FDC637AN MOSFET N-CH 20V 6.2A SSOT-6
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  • ON Semiconductor FDC637AN MOSFET N-CH 20V 6.2A SSOT-6

    ON Semiconductor FDC637AN MOSFET N-CH 20V 6.2A SSOT-6

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Description

ON Semiconductor FDC637AN MOSFET N-CH 20V 6.2A SSOT-6


ON Semiconductor FDC637AN MOSFET N-CH 20V 6.2A SSOT-6
NEW & Original 
Warranty 180days




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Manufacturer

ON Semiconductor

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

FDC637AN

FDC637AN
Description MOSFET N-CH 20V 6.2A SSOT-6
MOSFET N-CH 20V 6.2A SSOT-6
Manufacturer Standard Lead Time 42 Weeks
Detailed Description

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

N-Channel 20V 6.2A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Documents & Media
Datasheets FDC637AN
PCN Design/Specification Mold Compound 08/April/2008
Logo 17/Aug/2017
PCN Packaging Binary Year Code Marking 15/Jan/2014
Mult Devices 24/Oct/2017
Online Catalog N-Channel MOSFET (Metal Oxide) 
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series PowerTrench®
Packaging ? Tape & Reel (TR) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24 mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 10V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6

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